Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120A250FW-GE3

MXP120A250FW-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 3L package, designed for high-efficiency switching applications such as chargers, industrial UPS, boost inverters, and DC/DC converters. It has a typical on-state resistance of 250 mΩ at 25 °C and 20 V gate-source voltage, with a continuous drain current of 10.5 A at 25 °C and 6.7 A at 100 °C. The device supports a peak pulsed drain current of 21 A and exhibits a short-circuit withstand time of 3 μs. Maximum power dissipation is 56 W at 25 °C and 22 W at 100 °C. The junction-to-case thermal resistance is 2.24 °C/W, and the operating junction and storage temperature range is -55 °C to +150 °C. The part is lead-free and halogen-free.