Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120A080SL-GE3

MXP120A080SL-GE3 is a 1200 V N-channel silicon carbide MOSFET in a TO-247AD 4L package, designed for high-efficiency switching in applications such as solar inverters, DC/DC converters, energy storage systems, and UPS. The device has a typical on-state resistance of 80 mΩ at 25 °C and a continuous drain current rating of 31 A. It features a short-circuit withstand time of 3 μs, a maximum junction-to-case thermal resistance of 0.86 °C/W, and operates over a junction and storage temperature range of -55 °C to +175 °C. The package is lead-free and halogen-free, with a peak soldering temperature of 260 °C for 10 seconds. The MOSFET meets RoHS compliance standards.