Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120A080FW-GE3

The MXP120A080FW is a single N-channel silicon carbide MOSFET in a TO-247AD 3L package, rated for a drain-source voltage of 1200 V and a continuous drain current of 29 A at 25 °C. It has a typical on-state resistance of 80 mΩ at 25 °C and 20 V gate-source voltage, with a short-circuit withstand time of 3 μs. The device supports a maximum power dissipation of 139 W at 25 °C and operates over a junction and storage temperature range of -55 °C to +150 °C. Thermal resistance from junction to case is 0.9 °C/W. The gate charge is 47.3 nC, and output capacitance is 50 pF. It is lead-free, halogen-free, and suitable for applications including chargers, auxiliary motor drives, and DC/DC converters.