Vishay Intertechnology, Inc. Single FETs, MOSFETs MXP120A045FL-GE3

The MXP120A045FL-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 4L package, designed for high-efficiency switching applications such as chargers, boost inverters, and DC/DC converters. It has a drain-source on-state resistance of 45 mΩ at 25 °C and 20 V gate-source voltage, with a continuous drain current of 49 A at 25 °C and 31 A at 100 °C. The device supports a pulsed drain current of 98 A and has a short-circuit withstand time of 3 μs. Its maximum power dissipation is 227 W at 25 °C and 91 W at 100 °C, with a junction-to-case thermal resistance of 0.55 °C/W. The operating junction and storage temperature range is -55 °C to +150 °C. The part is lead-free and halogen-free.