Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs LTO030F10000FTE3

Description
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs Packaging: Bulk Part Status: Obsolete Resistance (Ohms): 5 Tolerance (+ or -): 5% Power (Watts): 30 W Composition: Wirewound Temperature Coefficient: Y6P Operating Temperature: -40°C ~ 85°C
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Description
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs Packaging: Bulk Part Status: Obsolete Resistance (Ohms): 5 Tolerance (+ or -): 5% Power (Watts): 30 W Composition: Wirewound Temperature Coefficient: Y6P Operating Temperature: -40°C ~ 85°C
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Datasheet
Datasheet Summary
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The LTO 30 is a 30 W thick film power resistor in a TO-220 package, designed for direct heatsink mounting with a ceramic substrate and no metal tab. It has a resistance range of 0.010 Ω to 550 kΩ, a maximum operating temperature of 150 °C, and a thermal resistance of 4.2 °C/W from junction to case. The resistor is non-inductive with inductance ≤ 0.1 μH, supports a limiting voltage of 500 V, and meets the climatic category 55/155/56. It is built with an alumina substrate, tinned copper connections, and complies with IEC 60695-11-5 for flammability. The part is RoHS compliant with lead-free tin plating and packaged in a tube of 50 units.

Datasheet Summary
Powered by GS/AI

The LTO 30 is a 30 W thick film power resistor in a TO-220 package, designed for direct heatsink mounting with a ceramic substrate and no metal tab. It has a resistance range of 0.010 Ω to 550 kΩ, a maximum operating temperature of 150 °C, and a thermal resistance of 4.2 °C/W from junction to case. The resistor is non-inductive with inductance ≤ 0.1 μH, supports a limiting voltage of 500 V, and meets the climatic category 55/155/56. It is built with an alumina substrate, tinned copper connections, and complies with IEC 60695-11-5 for flammability. The part is RoHS compliant with lead-free tin plating and packaged in a tube of 50 units.

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs Packaging: Bulk Part Status: Obsolete Resistance (Ohms): 5 Tolerance (+ or -): 5% Power (Watts): 30 W Composition: Wirewound Temperature Coefficient: Y6P Operating Temperature: -40°C ~ 85°C

Manufacturer: AMIS
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Packaging: Bulk
Part Status: Obsolete
Resistance (Ohms): 5
Tolerance (+ or -): 5%
Power (Watts): 30 W
Composition: Wirewound
Temperature Coefficient: Y6P
Operating Temperature: -40°C ~ 85°C

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Package Type SOT3
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