Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLZ44

Description
N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB
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Description
N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLZ44-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLZ44-ND
Single FETs, MOSFETs IRLZ44-ND
N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB

N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB

Buy Now Datasheet
FETs - Single - IRLZ44 - 1188698-IRLZ44 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRLZ44
1188698-IRLZ44
FETs - Single - IRLZ44 1188698-IRLZ44
Manufacturer: Vishay Siliconix Win Source Part Number: 1188698-IRLZ44 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.samsung.com/Prod ucts/Semiconductor Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 150W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 50A Rds On (Maximum) at Id, Vgs: 28mOhm at 31A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 66nC at 5V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 3300pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188698-IRLZ44
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.samsung.com/Products/Semiconductor
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 150W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 50A
Rds On (Maximum) at Id, Vgs: 28mOhm at 31A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 66nC at 5V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 3300pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ44 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLZ44
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLZ44
MOSFET N-CH 60V 50A TO220AB

MOSFET N-CH 60V 50A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLZ44-ND 1188698-IRLZ44 IRLZ44
Product Name Single FETs, MOSFETs FETs - Single - IRLZ44 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
V(BR)DSS 60 volts
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