Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLZ14STRRPBF

Description
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLZ14STRRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLZ14STRRPBF-ND
Single FETs, MOSFETs IRLZ14STRRPBF-ND
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
N-Channel SMD 60V 10A MOSFET Transistor
278-IRLZ14STRRPBF
N-Channel SMD 60V 10A MOSFET Transistor 278-IRLZ14STRRPBF
N-Channel MOSFET, 60V, 10A, 200mR, D2PAK, Surface Mount Product overview: IRLZ14STRRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLZ14STRRPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 60V, 10A, 200mR, D2PAK, Surface Mount Product overview: IRLZ14STRRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLZ14STRRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14STRRPBF - 126384-IRLZ14STRRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14STRRPBF
126384-IRLZ14STRRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14STRRPBF 126384-IRLZ14STRRPBF
Manufacturer: Vishay Win Source Part Number: 126384-IRLZ14STRRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Vishay
Win Source Part Number: 126384-IRLZ14STRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 5V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ14STRRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLZ14STRRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLZ14STRRPBF
MOSFET N-CH 60V 10A D2PAK

MOSFET N-CH 60V 10A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLZ14STRRPBF-ND 278-IRLZ14STRRPBF 126384-IRLZ14STRRPBF IRLZ14STRRPBF
Product Name Single FETs, MOSFETs N-Channel SMD 60V 10A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14STRRPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 43000 milliwatts 3700 to 43000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET - QPD1003 - Qorvo
Specs
Transistor Type IMFET
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
View Details
2 suppliers
GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
MOSFETs - 2148954 - RS Components, Ltd.
Infineon Technologies AG
Specs
Package Type TO-263; TO-263
View Details
7 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details