N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
N-Channel MOSFET, 60V, 10A, 200mR Rds On, TO-263 Product overview: IRLZ14SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRLZ14SPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017816-IRLZ14SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 5V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
N channel ;VBRDSS 60 V; RDSon 200 mOhm
N channel ;VBRDSS 60 V; RDSon 200 mOhm
MOSFET N-CH 60V 10A D2PAK
N CHANNEL MOSFET, 60V, 7.2A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
60V 10A 43W 200mΩ@5V,6A 2V@250uA N Channel TO-263-2 MOSFETs ROHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRLZ14SPBF-ND | 2088-IRLZ14SPBF | 017816-IRLZ14SPBF | 1808716 | IRLZ14SPBF | 19M4380 | 17930-IRLZ14SPBF | IRLZ14SPBF |
| Product Name | Single FETs, MOSFETs | N-Channel 60V 10A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14SPBF | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 60V, 7.2A, D2-Pak; Channel Type Vishay | 60V 10A 43W 200mΩ@5V,6A 2V@250uA N Channel TO-263-2 MOSFETs ROHS | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | ||||
| PD | 3700 milliwatts | 3700 to 43000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
