Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLZ14L

Description
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Through Hole TO-262-3
Request a Quote Datasheet
Description
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Through Hole TO-262-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLZ14L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLZ14L-ND
Single FETs, MOSFETs IRLZ14L-ND
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Through Hole TO-262-3

N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Through Hole TO-262-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14L - 1047695-IRLZ14L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14L
1047695-IRLZ14L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14L 1047695-IRLZ14L
Manufacturer: Vishay Win Source Part Number: 1047695-IRLZ14L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 5V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: Vishay
Win Source Part Number: 1047695-IRLZ14L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 5V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Singapore
60V 10A MOSFET Transistor
278-IRLZ14L
60V 10A MOSFET Transistor 278-IRLZ14L
MOSFET N-CH 60V 10A TO262-3 Product overview: IRLZ14L from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLZ14L can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 10A TO262-3 Product overview: IRLZ14L from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLZ14L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ14L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLZ14L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLZ14L
MOSFET N-CH 60V 10A TO262-3

MOSFET N-CH 60V 10A TO262-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLZ14L-ND 1047695-IRLZ14L 278-IRLZ14L IRLZ14L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ14L 60V 10A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; TO-262-3 Tube TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 60 volts
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