Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLU120PBF

Description
N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Description
N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Request a Quote Datasheet

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Single FETs, MOSFETs - IRLU120PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLU120PBF-ND
Single FETs, MOSFETs IRLU120PBF-ND
N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU120PBF - 1047670-IRLU120PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU120PBF
1047670-IRLU120PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU120PBF 1047670-IRLU120PBF
Manufacturer: Vishay Win Source Part Number: 1047670-IRLU120PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 270 mOhm @ 4.6A, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 1047670-IRLU120PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 270 mOhm @ 4.6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLU120PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLU120PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLU120PBF
MOSFET N-CH 100V 7.7A TO251AA

MOSFET N-CH 100V 7.7A TO251AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLU120PBF-ND 1047670-IRLU120PBF IRLU120PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU120PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 100 volts
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