Manufacturer: Vishay
Win Source Part Number: 1047585-IRLR120PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 270 mOhm @ 4.6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 75
N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
MOSFET N-CH 100V 7.7A DPAK
MOSFET RECOMMENDED ALT 844-IRLR120
N CHANNEL MOSFET, 100V, 7.7A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1047585-IRLR120PBF | IRLR120PBF-ND | IRLR120PBF | IRLR120PBF | 63J7626 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR120PBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 100V, 7.7A, D-Pak; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | ||||
| PD | 2500 to 42000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
