Vishay Precision Group MOSFETs IRLR110PBF

Description
N channel ;VBRDSS 100 V; RDSon 540 mOh
Request a Quote Datasheet
Description
N channel ;VBRDSS 100 V; RDSon 540 mOh
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 1808363 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808363
MOSFETs 1808363
N channel ;VBRDSS 100 V; RDSon 540 mOh

N channel ;VBRDSS 100 V; RDSon 540 mOh

Supplier's Site
MOSFETs - 1808833 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808833
MOSFETs 1808833
N channel ;VBRDSS 100 V; RDSon 540 mOh

N channel ;VBRDSS 100 V; RDSon 540 mOh

Supplier's Site
Singapore
N-Channel 100V 4.3A DPAK MOSFET Transistor
278-IRLR110PBF
N-Channel 100V 4.3A DPAK MOSFET Transistor 278-IRLR110PBF
N-Channel MOSFET, 100V, 4.3A, 540mR, DPAK Product overview: IRLR110PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 4.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLR110PBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 100V, 4.3A, 540mR, DPAK Product overview: IRLR110PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 4.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLR110PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRLR110PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR110PBF-ND
Single FETs, MOSFETs IRLR110PBF-ND
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR110PBF - 1047580-IRLR110PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR110PBF
1047580-IRLR110PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR110PBF 1047580-IRLR110PBF
Manufacturer: Vishay Win Source Part Number: 1047580-IRLR110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 5V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 75

Manufacturer: Vishay
Win Source Part Number: 1047580-IRLR110PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.3A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Quantity per package: 75

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR110PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLR110PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLR110PBF
MOSFET N-CH 100V 4.3A DPAK

MOSFET N-CH 100V 4.3A DPAK

Supplier's Site
Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay - 38K2991 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay
38K2991
Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay 38K2991
MOSFET, N-CH, 100V, 4.3A, 150DEG C, 25W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 4.3A, 150DEG C, 25W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 844-IRLR110

MOSFET RECOMMENDED ALT 844-IRLR110

Buy Now Datasheet

Technical Specifications

  RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1808363 278-IRLR110PBF IRLR110PBF-ND 1047580-IRLR110PBF IRLR110PBF 38K2991 IRLR110PBF
Product Name MOSFETs N-Channel 100V 4.3A DPAK MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR110PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 2500 milliwatts 2500 to 25000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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