Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR024PBF IRLR024PBF

Description
Manufacturer: Vishay Win Source Part Number: 017787-IRLR024PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 5V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Motor Drive & Control, Industrial
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Description
Manufacturer: Vishay Win Source Part Number: 017787-IRLR024PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 5V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Motor Drive & Control, Industrial
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR024PBF - 017787-IRLR024PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR024PBF
017787-IRLR024PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR024PBF 017787-IRLR024PBF
Manufacturer: Vishay Win Source Part Number: 017787-IRLR024PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 5V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Motor Drive & Control, Industrial

Manufacturer: Vishay
Win Source Part Number: 017787-IRLR024PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 870pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control, Industrial

Buy Now Datasheet
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR024PBF - Shenzhen Shengyu Electronics Technology Limited
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLR024PBF
MOSFET N-CH 60V 14A DPAK

MOSFET N-CH 60V 14A DPAK

Supplier's Site
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK - 880-IRLR024PBF - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK
880-IRLR024PBF
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK 880-IRLR024PBF
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK

Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017787-IRLR024PBF IRLR024PBF-ND IRLR024PBF IRLR024PBF 880-IRLR024PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR024PBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 42000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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