Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014TRPBF IRLR014TRPBF

Description
Manufacturer: Vishay Win Source Part Number: 017784-IRLR014TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Application Field: Used in Power Management
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014TRPBF - 017784-IRLR014TRPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRLR014PBFDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IRLR014PBFCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IRLR014PBFTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR014TRPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 60V, 7.7A, D-Pak, Full Reel; Channel Type Vishay - 31K2371 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 60V, 7.7A, To-252 Rohs Compliant Vishay - 56AJ9933 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017784-IRLR014TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Application Field: Used in Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014TRPBF - 017784-IRLR014TRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014TRPBF
017784-IRLR014TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014TRPBF 017784-IRLR014TRPBF
Manufacturer: Vishay Win Source Part Number: 017784-IRLR014TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 5V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 017784-IRLR014TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 5V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRLR014PBFDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR014PBFDKR-ND
Single FETs, MOSFETs IRLR014PBFDKR-ND
N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - IRLR014PBFCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR014PBFCT-ND
Single FETs, MOSFETs IRLR014PBFCT-ND
N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - IRLR014PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR014PBFTR-ND
Single FETs, MOSFETs IRLR014PBFTR-ND
N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR014TRPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLR014TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLR014TRPBF
MOSFET N-CH 60V 7.7A DPAK

MOSFET N-CH 60V 7.7A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRLR014TRPBF
MOSFET IRLR014TRPBF
MOSFET RECOMMENDED ALT 844-IRLR014TR

MOSFET RECOMMENDED ALT 844-IRLR014TR

Buy Now Datasheet
N Channel Mosfet, 60V, 7.7A, D-Pak, Full Reel; Channel Type Vishay - 31K2371 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 7.7A, D-Pak, Full Reel; Channel Type Vishay
31K2371
N Channel Mosfet, 60V, 7.7A, D-Pak, Full Reel; Channel Type Vishay 31K2371
N CHANNEL MOSFET, 60V, 7.7A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 7.7A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 60V, 7.7A, To-252 Rohs Compliant Vishay - 56AJ9933 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 7.7A, To-252 Rohs Compliant Vishay
56AJ9933
Mosfet, N-Ch, 60V, 7.7A, To-252 Rohs Compliant Vishay 56AJ9933
MOSFET, N-CH, 60V, 7.7A, TO-252 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 7.7A, TO-252 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017784-IRLR014TRPBF IRLR014PBFDKR-ND IRLR014TRPBF IRLR014TRPBF 31K2371 56AJ9933
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014TRPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 60V, 7.7A, D-Pak, Full Reel; Channel Type Vishay Mosfet, N-Ch, 60V, 7.7A, To-252 Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 2500 to 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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