Vishay Precision Group Single FETs, MOSFETs IRLR014PBF

Description
N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
Request a Quote Datasheet
Description
N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLR014PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR014PBF-ND
Single FETs, MOSFETs IRLR014PBF-ND
N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Transistor - 16357533 - Radwell International
Willingboro, NJ, United States
Transistor
16357533
Transistor 16357533
N CHANNEL MOSFET, TRANSISTOR POLARITY: N CHANNEL, CONTINUOUS DRAIN CURRENT ID: 7.7 AMP, DRAIN SOURCE VOLTAGE VDS: 60V, ON RESISTANCE RDS(ON):0.2OHM, RDS(ON) TEST VOLTAGE VGS:5V, THRESHOLD VOLTAGE VGS:2V, NO. OF PINS: 3 PINS, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, TRANSISTOR POLARITY: N CHANNEL, CONTINUOUS DRAIN CURRENT ID: 7.7 AMP, DRAIN SOURCE VOLTAGE VDS: 60V, ON RESISTANCE RDS(ON):0.2OHM, RDS(ON) TEST VOLTAGE VGS:5V, THRESHOLD VOLTAGE VGS:2V, NO. OF PINS: 3 PINS, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014PBF - 017783-IRLR014PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014PBF
017783-IRLR014PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014PBF 017783-IRLR014PBF
Manufacturer: Vishay Win Source Part Number: 017783-IRLR014PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.7A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 5V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017783-IRLR014PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 5V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 4.6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR014PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLR014PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLR014PBF
MOSFET N-CH 60V 7.7A DPAK

MOSFET N-CH 60V 7.7A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 844-IRLR014

MOSFET RECOMMENDED ALT 844-IRLR014

Buy Now Datasheet
N Channel Mosfet, 60V, 7.7A, D-Pak; Channel Type Vishay - 63J7618 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 7.7A, D-Pak; Channel Type Vishay
63J7618
N Channel Mosfet, 60V, 7.7A, D-Pak; Channel Type Vishay 63J7618
N CHANNEL MOSFET, 60V, 7.7A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 7.7A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Radwell International Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRLR014PBF-ND 16357533 017783-IRLR014PBF IRLR014PBF IRLR014PBF 63J7618
Product Name Single FETs, MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR014PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 60V, 7.7A, D-Pak; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
V(BR)DSS 60 volts
PD 2500 to 25000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - UF3SC120016K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
3 suppliers
GaAs Fet Switches - KCB821 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
IGBT Transistors - AIHD04N60RATMA1 - VAST STOCK CO., LIMITED
Infineon Technologies AG
View Details
2 suppliers