Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL110PBF IRLL110PBF

Description
Manufacturer: Vishay Win Source Part Number: 069720-IRLL110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL110PBF - 069720-IRLL110PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRLL110PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRLL110PBF-ND - DigiKey
    DigiKey
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V - 70078985 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLL110PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 069720-IRLL110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL110PBF - 069720-IRLL110PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL110PBF
069720-IRLL110PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL110PBF 069720-IRLL110PBF
Manufacturer: Vishay Win Source Part Number: 069720-IRLL110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 069720-IRLL110PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 1.5A MOSFET Transistor
278-IRLL110PBF
100V 1.5A MOSFET Transistor 278-IRLL110PBF
MOSFET N-CH 100V 1.5A SOT223 Product overview: IRLL110PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL110PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 1.5A SOT223 Product overview: IRLL110PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL110PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRLL110PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRLL110PBF
Single FETs, MOSFETs IRLL110PBF
MOSFET N-CH 100V 1.5A SOT223

MOSFET N-CH 100V 1.5A SOT223

Supplier's Site Datasheet
Single FETs, MOSFETs - IRLL110PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLL110PBF-ND
Single FETs, MOSFETs IRLL110PBF-ND
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V - 70078985 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V
70078985
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V 70078985
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLL110PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLL110PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLL110PBF
MOSFET N-CH 100V 1.5A SOT223

MOSFET N-CH 100V 1.5A SOT223

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 069720-IRLL110PBF 278-IRLL110PBF IRLL110PBF IRLL110PBF-ND 70078985 IRLL110PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL110PBF 100V 1.5A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 2000 to 3100 milliwatts 2000 milliwatts 2000 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-223 Tube SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA SOT223 TO-261-4, TO-261AA
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