MOSFET N-CH 100V 1.5A SOT223 Product overview: IRLL110PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL110PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 1.5A SOT223
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Manufacturer: Vishay
Win Source Part Number: 069720-IRLL110PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V
MOSFET N-CH 100V 1.5A SOT223
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRLL110PBF | IRLL110PBF | IRLL110PBF-ND | 069720-IRLL110PBF | 70078985 | IRLL110PBF |
| Product Name | 100V 1.5A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL110PBF | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 2000 milliwatts | 2000 milliwatts | 2000 to 3100 milliwatts | 3100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tube | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223 | SOT223 | TO-261-4, TO-261AA |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | |||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel |
