N-Channel MOSFET, 200V, 6.2A, 400mR, TO-220 Product overview: IRLI630GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 6.2A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 6.2A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLI630GPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1047557-IRLI630GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 400 mOhm @ 3.7A, 5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
N-Channel 200V 6.2A (Tc) 35W (Tc) Through Hole TO-220-3
MOSFET N-CH 200V 6.2A TO220-3
N CHANNEL MOSFET, 200V, 6.2A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
VISHAY IRLI630GPBF. MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 5 V, 1 V
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRLI630GPBF | 1047557-IRLI630GPBF | IRLI630GPBF-ND | IRLI630GPBF | IRLI630GPBF | 63J7595 | 880-IRLI630GPBF |
| Product Name | N-Channel 200V 6.2A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLI630GPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 200V, 6.2A, To-220Fp; Channel Type Vishay | VISHAY IRLI630GPBF. MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 5 V, 1 V |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 35000 milliwatts | 35000 milliwatts | 35000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 200 volts | 200 volts |
