Manufacturer: Vishay
Win Source Part Number: 1047555-IRLI620G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.4A, 5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 4A TO220-3 Product overview: IRLI620G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 4A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 4A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLI620G can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 4A TO220-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1047555-IRLI620G | 278-IRLI620G | IRLI620G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLI620G | 200V 4A TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 200 volts | ||
| PD | 30000 milliwatts | 30000 milliwatts |