Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLI530GPBF

Description
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3
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Description
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - IRLI530GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLI530GPBF-ND
Single FETs, MOSFETs IRLI530GPBF-ND
N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3

N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLI530GPBF - 140787-IRLI530GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLI530GPBF
140787-IRLI530GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLI530GPBF 140787-IRLI530GPBF
Manufacturer: Vishay Win Source Part Number: 140787-IRLI530GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9.7A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 28nC @ 5V Max Input Capacitance: 930pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Vishay
Win Source Part Number: 140787-IRLI530GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9.7A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 28nC @ 5V
Max Input Capacitance: 930pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLI530GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLI530GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLI530GPBF
MOSFET N-CH 100V 9.7A TO220-3

MOSFET N-CH 100V 9.7A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLI530GPBF-ND 140787-IRLI530GPBF IRLI530GPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLI530GPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3; TO-220-3 28 nC @ 5 V
V(BR)DSS 100 volts
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