N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
N-Channel MOSFET, 100V, 1.3A, 270mR, Through Hole DIP Product overview: IRLD120PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 100V, 1.3A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLD120PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 1.3A 4DIP
N CHANNEL MOSFET, 100V, 1.3A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 1.3A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.3A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.27OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 1.3A 4DIP
MOSFET N-CH 100V HEXFET MOSFET HEXDI
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-10V;-55
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRLD120PBF-ND | 278-IRLD120PBF | IRLD120PBF | 19K8369 | 16357465 | IRLD120PBF | IRLD120PBF | 70078983 |
| Product Name | Single FETs, MOSFETs | N-Channel Through-Hole 100V 1.3A MOSFET Transistor | Single FETs, MOSFETs | N Channel Mosfet, 100V, 1.3A, Hd-1; Channel Type Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-10V;-55 |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | "4-DIP (0.300"", 7.62mm)" | 4-DIP (0.300", 7.62mm) | TO-3 | 4-DIP (0.300, 7.62mm) | HD-1 | |||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
