MOSFET N-CH 100V 1.3A 4DIP
N CHANNEL MOSFET, 100V, 1.3A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.3A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.27OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-10V;-55
MOSFET N-CH 100V HEXFET MOSFET HEXDI
N CHANNEL MOSFET, 100V, 1.3A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 100V 1.3A 4DIP
| ODG (Origin Data Global) | Radwell International | DigiKey | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRLD120PBF | 16357465 | IRLD120PBF-ND | 70078983 | IRLD120PBF | 19K8369 | IRLD120PBF |
| Product Name | Single FETs, MOSFETs | Transistor | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-10V;-55 | MOSFET | N Channel Mosfet, 100V, 1.3A, Hd-1; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 1300 milliamps | 1300 milliamps | |||||
| PD | 1300 milliwatts | 1300 milliwatts |
