MOSFET N-CH 100V 1.3A 4DIP Product overview: IRLD120 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLD120 can be used for catalog matching and distributor lookup.
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Manufacturer: Vishay
Win Source Part Number: 875238-IRLD120
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Package: Tube
Package: 4-DIP (0.300", 7.62mm)
Mounting: Through Hole
Part Status: Obsolete
Family Name: IRLD120
Categories: Discrete Semiconductor Products
Case / Package: 4-HVMDIP
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 100V 1.3A 4DIP
MOSFET N-CH 100V 1.3A 4-DIP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRLD120 | IRLD120-ND | 875238-IRLD120 | IRLD120 | 880-IRLD120 |
| Product Name | 100V 1.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD120 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 100V 1.3A 4-DIP |
| PD | 1300 milliwatts | 1300 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tube | "4-DIP (0.300"", 7.62mm)" | SOT3; 4-HVMDIP | 4-DIP (0.300, 7.62mm) | |
| Packing Method | Tube | Tube; Tube | Tube; Tube |