Vishay Intertechnology, Inc. Single FETs, MOSFETs IRLD120

Description
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
  • Single FETs, MOSFETs - IRLD120-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD120 - 875238-IRLD120 - Win Source Electronics
    Win Source Electronics
  • MOSFET N-CH 100V 1.3A 4-DIP - 880-IRLD120 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD120 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLD120-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLD120-ND
Single FETs, MOSFETs IRLD120-ND
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 1.3A MOSFET Transistor
278-IRLD120
100V 1.3A MOSFET Transistor 278-IRLD120
MOSFET N-CH 100V 1.3A 4DIP Product overview: IRLD120 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLD120 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 1.3A 4DIP Product overview: IRLD120 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLD120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD120 - 875238-IRLD120 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD120
875238-IRLD120
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD120 875238-IRLD120
Manufacturer: Vishay Win Source Part Number: 875238-IRLD120 Operating Temperature Range: -55°C ~ 175°C (TJ) Features: N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP Package: Tube Package: 4-DIP (0.300", 7.62mm) Mounting: Through Hole Part Status: Obsolete Family Name: IRLD120 Categories: Discrete Semiconductor Products Case / Package: 4-HVMDIP ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: Vishay
Win Source Part Number: 875238-IRLD120
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Package: Tube
Package: 4-DIP (0.300", 7.62mm)
Mounting: Through Hole
Part Status: Obsolete
Family Name: IRLD120
Categories: Discrete Semiconductor Products
Case / Package: 4-HVMDIP
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

Buy Now Datasheet
MOSFET N-CH 100V 1.3A 4-DIP - 880-IRLD120 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 1.3A 4-DIP
880-IRLD120
MOSFET N-CH 100V 1.3A 4-DIP 880-IRLD120
MOSFET N-CH 100V 1.3A 4-DIP

MOSFET N-CH 100V 1.3A 4-DIP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD120 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLD120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLD120
MOSFET N-CH 100V 1.3A 4DIP

MOSFET N-CH 100V 1.3A 4DIP

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLD120-ND 278-IRLD120 875238-IRLD120 880-IRLD120 IRLD120
Product Name Single FETs, MOSFETs 100V 1.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD120 MOSFET N-CH 100V 1.3A 4-DIP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type "4-DIP (0.300"", 7.62mm)" Tube SOT3; 4-HVMDIP 4-DIP (0.300, 7.62mm)
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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