N CHANNEL MOSFET, 60V, 2.5A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2.5A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.1OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 2.5A 4DIP
Manufacturer: Vishay Siliconix
Win Source Part Number: 777115-IRLD024PBF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 4-DIP (0.300", 7.62mm)
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Family Name: IRLD024
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Manufacturer Package: 4-DIP, Hexdip, HVMDIP
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 870pF @ 25V
Vgs (Maximum): ±10V
Power Dissipation (Maximum): 1.3W (Ta)
Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 1.5A, 5V
Alternative Parts (Cross-Reference): SiHLD024-E3;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
N CHANNEL MOSFET, 60V, 2.5A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18
MOSFET N-CH 60V HEXFET MOSFET HEXDI
MOSFET N-CH 60V 2.5A 4DIP
| Radwell International | ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 16357457 | IRLD024PBF | 777115-IRLD024PBF | IRLD024PBF-ND | 5410632 | 19K8367 | 70078981 | IRLD024PBF | IRLD024PBF |
| Product Name | Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD024PBF | Single FETs, MOSFETs | MOSFETs | N Channel Mosfet, 60V, 2.5A, Hd-1; Channel Type Vishay | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| IDSS | 2500 milliamps | 2500 milliamps | 2500 milliamps | ||||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts |
