Vishay Precision Group Single FETs, MOSFETs IRLD024PBF

Description
MOSFET N-CH 60V 2.5A 4DIP
  • Single FETs, MOSFETs - IRLD024PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 16357457 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRLD024PBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD024PBF - 777115-IRLD024PBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD024PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 60V, 2.5A, Hd-1; Channel Type Vishay - 19K8367 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18 - 70078981 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
MOSFET N-CH 60V 2.5A 4DIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLD024PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRLD024PBF
Single FETs, MOSFETs IRLD024PBF
MOSFET N-CH 60V 2.5A 4DIP

MOSFET N-CH 60V 2.5A 4DIP

Supplier's Site Datasheet
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5410632
MOSFETs 5410632
MOSFET N-Channel 60V 2.5A HVMDIP4

MOSFET N-Channel 60V 2.5A HVMDIP4

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780918
MOSFETs 1780918
MOSFET N-Channel 60V 2.5A HVMDIP4

MOSFET N-Channel 60V 2.5A HVMDIP4

Supplier's Site
Transistor - 16357457 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357457
Transistor 16357457
N CHANNEL MOSFET, 60V, 2.5A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2.5A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.1OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 60V, 2.5A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2.5A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.1OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRLD024PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLD024PBF-ND
Single FETs, MOSFETs IRLD024PBF-ND
N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD024PBF - 777115-IRLD024PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD024PBF
777115-IRLD024PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD024PBF 777115-IRLD024PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 777115-IRLD024PBF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 4-DIP (0.300", 7.62mm) Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Family Name: IRLD024 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Manufacturer Package: 4-DIP, Hexdip, HVMDIP Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 870pF @ 25V Vgs (Maximum): ±10V Power Dissipation (Maximum): 1.3W (Ta) Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 1.5A, 5V Alternative Parts (Cross-Reference): SiHLD024-E3; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 777115-IRLD024PBF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 4-DIP (0.300", 7.62mm)
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Family Name: IRLD024
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Manufacturer Package: 4-DIP, Hexdip, HVMDIP
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 870pF @ 25V
Vgs (Maximum): ±10V
Power Dissipation (Maximum): 1.3W (Ta)
Rds On (Maximum) @ Id, Vgs: 100 mOhm @ 1.5A, 5V
Alternative Parts (Cross-Reference): SiHLD024-E3;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD024PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLD024PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLD024PBF
MOSFET N-CH 60V 2.5A 4DIP

MOSFET N-CH 60V 2.5A 4DIP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRLD024PBF
MOSFET IRLD024PBF
MOSFET N-CH 60V HEXFET MOSFET HEXDI

MOSFET N-CH 60V HEXFET MOSFET HEXDI

Buy Now Datasheet
N Channel Mosfet, 60V, 2.5A, Hd-1; Channel Type Vishay - 19K8367 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 2.5A, Hd-1; Channel Type Vishay
19K8367
N Channel Mosfet, 60V, 2.5A, Hd-1; Channel Type Vishay 19K8367
N CHANNEL MOSFET, 60V, 2.5A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 2.5A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18 - 70078981 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18
70078981
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18 70078981
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) RS Components, Ltd. Radwell International DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRLD024PBF 5410632 16357457 IRLD024PBF-ND 777115-IRLD024PBF IRLD024PBF IRLD024PBF 19K8367 70078981
Product Name Single FETs, MOSFETs MOSFETs Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD024PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 60V, 2.5A, Hd-1; Channel Type Vishay MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts 60 volts
IDSS 2500 milliamps 2500 milliamps 2500 milliamps
PD 1300 milliwatts 1300 milliwatts 1300 milliwatts
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