Vishay Precision Group Transistor IRLD014PBF

Description
N CHANNEL MOSFET, 60V, 1.7A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.7A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.2OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 16357453 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRLD014PBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF - 069711-IRLD014PBF - Win Source Electronics
    Win Source Electronics
  • MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1. - 70078980 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay - 97K2342 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD014PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N CHANNEL MOSFET, 60V, 1.7A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.7A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.2OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 16357453 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357453
Transistor 16357453
N CHANNEL MOSFET, 60V, 1.7A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.7A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.2OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 60V, 1.7A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.7A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.2OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRLD014PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLD014PBF-ND
Single FETs, MOSFETs IRLD014PBF-ND
N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF - 069711-IRLD014PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF
069711-IRLD014PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF 069711-IRLD014PBF
Manufacturer: Vishay Win Source Part Number: 069711-IRLD014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 069711-IRLD014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 5V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1. - 70078980 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1.
70078980
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1. 70078980
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1.

Supplier's Site
Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay - 97K2342 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay
97K2342
Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay 97K2342
MOSFET, N-CH, 60V, 1.7A, HVMDIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; Product Range:-RoHS Compliant: Yes

MOSFET, N-CH, 60V, 1.7A, HVMDIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; Product Range:-RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRLD014PBF
MOSFET IRLD014PBF
MOSFET N-CH 60V HEXFET MOSFET HEXDI

MOSFET N-CH 60V HEXFET MOSFET HEXDI

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD014PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLD014PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLD014PBF
MOSFET N-CH 60V 1.7A 4DIP

MOSFET N-CH 60V 1.7A 4DIP

Supplier's Site

Technical Specifications

  Radwell International DigiKey Win Source Electronics Allied Electronics, Inc. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 16357453 IRLD014PBF-ND 069711-IRLD014PBF 70078980 97K2342 IRLD014PBF IRLD014PBF
Product Name Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1. Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type "4-DIP (0.300"", 7.62mm)" SOT3; 4-DIP, Hexdip, HVMDIP HD-1 TO-3 4-DIP (0.300, 7.62mm)
V(BR)DSS 60 volts 60 volts
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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