Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF IRLD014PBF

Description
Manufacturer: Vishay Win Source Part Number: 069711-IRLD014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Application Field: Used in Power Management
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 069711-IRLD014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Application Field: Used in Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF - 069711-IRLD014PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF
069711-IRLD014PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF 069711-IRLD014PBF
Manufacturer: Vishay Win Source Part Number: 069711-IRLD014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 5V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 069711-IRLD014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 5V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
Transistor - 16357453 - Radwell International
Willingboro, NJ, United States
Transistor
16357453
Transistor 16357453
N CHANNEL MOSFET, 60V, 1.7A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.7A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.2OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 60V, 1.7A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.7A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.2OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRLD014PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLD014PBF-ND
Single FETs, MOSFETs IRLD014PBF-ND
N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLD014PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLD014PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLD014PBF
MOSFET N-CH 60V 1.7A 4DIP

MOSFET N-CH 60V 1.7A 4DIP

Supplier's Site
Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay - 97K2342 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay
97K2342
Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay 97K2342
MOSFET, N-CH, 60V, 1.7A, HVMDIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; Product Range:-RoHS Compliant: Yes

MOSFET, N-CH, 60V, 1.7A, HVMDIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; Product Range:-RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 60V HEXFET MOSFET HEXDI

MOSFET N-CH 60V HEXFET MOSFET HEXDI

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1. - 70078980 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1.
70078980
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1. 70078980
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1.

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069711-IRLD014PBF 16357453 IRLD014PBF-ND IRLD014PBF 97K2342 IRLD014PBF 70078980
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay MOSFET MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1.
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type SOT3; 4-DIP, Hexdip, HVMDIP "4-DIP (0.300"", 7.62mm)" 4-DIP (0.300, 7.62mm) TO-3 HD-1
Unlock Full Specs
to access all available technical data

Similar Products

 - AUIRF2805 - Rochester Electronics
Infineon Technologies AG
Specs
Polarity N-Channel
rDS(on) 0.0047 ohms
Package Type TO-220; TO-220-3
View Details
5 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1540D - 855042-2SA1540D - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details