N-Channel MOSFET, 60V, 1.7A, 200mR, DIP, Through Hole Product overview: IRLD014PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 60V, 1.7A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 60V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLD014PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 069711-IRLD014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 5V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1.
N CHANNEL MOSFET, 60V, 1.7A, HD-1; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.7A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.2OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; NO. OF PINS:4PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 60V, 1.7A, HVMDIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; Product Range:-RoHS Compliant: Yes
MOSFET N-CH 60V HEXFET MOSFET HEXDI
MOSFET N-CH 60V 1.7A 4DIP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Allied Electronics, Inc. | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRLD014PBF | 069711-IRLD014PBF | IRLD014PBF-ND | 70078980 | 16357453 | 97K2342 | IRLD014PBF | IRLD014PBF |
| Product Name | N-Channel Through-Hole 60V 1.7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLD014PBF | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1. | Transistor | Mosfet, N-Ch, 60V, 1.7A, Hvmdip; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| Package Type | SOT3; 4-DIP, Hexdip, HVMDIP | "4-DIP (0.300"", 7.62mm)" | HD-1 | TO-3 | 4-DIP (0.300, 7.62mm) |
