N-Channel MOSFET, 200V, 17A, 180mR, TO-220AB Product overview: IRL640PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL640PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1047522-IRL640PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 66nC @ 5V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 17A TO220AB
N-Channel 200V 17A (Tc) 125W (Tc) Through Hole TO-220AB
N CHANNEL MOSFET, 200V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 17 A, 200 V, 180 mohm, 5 V, 2 V RoHS Compliant: Yes
200V 17A 180mΩ@5V,10A 125W 2V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET N-CH 200V 17A TO220AB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRL640PBF | 1047522-IRL640PBF | IRL640PBF | 2567327P | IRL640PBF-ND | 63J7818 | 38K3082 | IRL640PBF | IRL640PBF | IRL640PBF |
| Product Name | N-Channel 200V 17A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL640PBF | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 200V, 17A, To-220; Channel Type Vishay | Mosfet Transistor, N Channel, 17 A, 200 V, 180 Mohm, 5 V, 2 V Rohs Compliant Vishay | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220 | TO-220; TO-220-3 | TO-3; TO-220 | TO-3 | TO-220 | TO-220; TO-220-3 |
