N-Channel 200V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay
Win Source Part Number: 205472-IRL630SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
200V 9A N-Channel MOSFET, 400mR Rds On, D2PAK Product overview: IRL630SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL630SPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V HEXFET MOSFET D2-PA
N CHANNEL MOSFET, 200V, 9A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 200V 9A D2PAK
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRL630SPBF-ND | 205472-IRL630SPBF | 278-IRL630SPBF | IRL630SPBF | 63J7817 | IRL630SPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL630SPBF | N-Channel 200V 9A MOSFET Transistor | MOSFET | N Channel Mosfet, 200V, 9A, D2-Pak; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| V(BR)DSS | 200 volts | |||||
| PD | 3100 to 74000 milliwatts | 3100 milliwatts |
