Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL630PBF IRL630PBF

Description
Manufacturer: Vishay Win Source Part Number: 205471-IRL630PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL630PBF - 205471-IRL630PBF - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 7084875 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 9189862 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IRL630PBF-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 200V, 9A, To-220; Channel Type Vishay - 63J7816 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL630PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 205471-IRL630PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL630PBF - 205471-IRL630PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL630PBF
205471-IRL630PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL630PBF 205471-IRL630PBF
Manufacturer: Vishay Win Source Part Number: 205471-IRL630PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 205471-IRL630PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.4A, 5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 7084875 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7084875
MOSFETs 7084875
MOSFET N-Channel 200V 9A TO220AB

MOSFET N-Channel 200V 9A TO220AB

Supplier's Site
MOSFETs - 9189862 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9189862
MOSFETs 9189862
MOSFET N-Channel 200V 9A TO220AB

MOSFET N-Channel 200V 9A TO220AB

Supplier's Site
Single FETs, MOSFETs - IRL630PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL630PBF-ND
Single FETs, MOSFETs IRL630PBF-ND
N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
N Channel Mosfet, 200V, 9A, To-220; Channel Type Vishay - 63J7816 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 9A, To-220; Channel Type Vishay
63J7816
N Channel Mosfet, 200V, 9A, To-220; Channel Type Vishay 63J7816
N CHANNEL MOSFET, 200V, 9A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 9A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRL630PBF
MOSFET IRL630PBF
MOSFET N-CH 200V HEXFET MOSFET

MOSFET N-CH 200V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL630PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL630PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL630PBF
MOSFET N-CH 200V 9A TO220AB

MOSFET N-CH 200V 9A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205471-IRL630PBF 7084875 IRL630PBF-ND 63J7816 IRL630PBF IRL630PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL630PBF MOSFETs Single FETs, MOSFETs N Channel Mosfet, 200V, 9A, To-220; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts
PD 74000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; To-220ab TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
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