The Vishay N-Channel MOSFET, part number 60AC9842, features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 5.2A. It is housed in a TO-220AB package, which is suitable for applications requiring power dissipation levels up to approximately 50W. The device has a low on-resistance (R_DS(on)) of 0.80Oc at a gate-source voltage (V_GS) of 5V, making it efficient for switching applications. This MOSFET is designed for fast switching and has a total gate charge (Q_g) of 16nC, with gate-source and gate-drain charges of 2.7nC and 9.6nC, respectively. It is compliant with RoHS standards, ensuring it meets environmental regulations. The device also supports logic-level gate drive, simplifying integration into various circuits. Its rugged design includes dynamic dV/dt rating and repetitive avalanche capability, enhancing reliability in demanding applications. Engineers considering this MOSFET for their projects should evaluate its specifications against their requirements for voltage, current, and thermal performance.
N-Channel MOSFET, 200V, 5.2A, 800mR, TO-220 Product overview: IRL620PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 5.2A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.2A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL620PBF can be used for catalog matching and distributor lookup.
N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
Manufacturer: Vishay
Win Source Part Number: 1047515-IRL620PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.2A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 16nC @ 5V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 50
N channel ;VBRDSS 200 V; RDSon 800 mOh
N channel ;VBRDSS 200 V; RDSon 800 mOh
MOSFET N-CH 200V 5.2A TO220AB
N CHANNEL MOSFET, 200V, 5.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET, N-CH, 200V, 5.2A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET RECOMMENDED ALT 844-IRF620PBF
N CHANNEL MOSFET, 200V, 5.2A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:5.2A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.8OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRL620PBF | IRL620PBF-ND | 1047515-IRL620PBF | 1808799 | IRL620PBF | 63J7814 | 60AC9842 | IRL620PBF | 16357401 |
| Product Name | N-Channel 200V 5.2A TO-220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL620PBF | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 200V, 5.2A To-220; Channel Type Vishay | Mosfet, N-Ch, 200V, 5.2A, To-220Ab-3; Transistor Polarity Vishay | MOSFET | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| PD | 50000 milliwatts | 50000 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220AB | TO-220; TO-220-3 | TO-3; TO-220 | TO-3; TO-220 |
