The Vishay N-Channel MOSFET, part number 60AC9842, features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 5.2A. It is housed in a TO-220AB package, which is suitable for applications requiring power dissipation levels up to approximately 50W. The device has a low on-resistance (R_DS(on)) of 0.80Ω at a gate-source voltage (V_GS) of 5V, making it efficient for switching applications. This MOSFET is designed for fast switching and has a total gate charge (Q_g) of 16nC, with gate-source and gate-drain charges of 2.7nC and 9.6nC, respectively. It is compliant with RoHS standards, ensuring it meets environmental regulations. The device also supports logic-level gate drive, simplifying integration into various circuits. Its rugged design includes dynamic dV/dt rating and repetitive avalanche capability, enhancing reliability in demanding applications. Engineers considering this MOSFET for their projects should evaluate its specifications against their requirements for voltage, current, and thermal performance.
Manufacturer: Vishay
Win Source Part Number: 1047515-IRL620PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.2A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 16nC @ 5V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 50
N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
N channel ;VBRDSS 200 V; RDSon 800 mOh
N channel ;VBRDSS 200 V; RDSon 800 mOh
N-Channel MOSFET, 200V, 5.2A, 800mR, TO-220 Product overview: IRL620PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 5.2A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.2A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL620PBF can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET, 200V, 5.2A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:5.2A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.8OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:2V; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 200V, 5.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET, N-CH, 200V, 5.2A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET RECOMMENDED ALT 844-IRF620PBF
MOSFET N-CH 200V 5.2A TO220AB
| Win Source Electronics | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1047515-IRL620PBF | IRL620PBF-ND | 1808799 | 278-IRL620PBF | 16357401 | 63J7814 | 60AC9842 | IRL620PBF | IRL620PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL620PBF | Single FETs, MOSFETs | MOSFETs | N-Channel 200V 5.2A TO-220 MOSFET Transistor | Transistor | N Channel Mosfet, 200V, 5.2A To-220; Channel Type Vishay | Mosfet, N-Ch, 200V, 5.2A, To-220Ab-3; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 200 volts | ||||||||
| PD | 50000 milliwatts | 50000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
