POWER FIELD-EFFECT TRANSISTOR, 9.2A I(D), 100V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
MOSFET N-CH 100V 9.2A TO220AB
Manufacturer: Vishay
Win Source Part Number: 1047500-IRL520PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 270 mOhm @ 5.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50
MOSFET N-CH 100V 9.2A TO220AB
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V
MOSFET Transistor, N Channel, 9.2 A, 100 V, 270 mohm, 5 V, 2 V RoHS Compliant: Yes
MOSFET RECOMMENDED ALT 844-IRL520LPBF
| Radwell International | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 16357377 | IRL520PBF-ND | IRL520PBF | 1047500-IRL520PBF | IRL520PBF | 70078977 | 97K2387 | IRL520PBF |
| Product Name | Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V | Mosfet Transistor, N Channel, 9.2 A, 100 V, 270 Mohm, 5 V, 2 V Rohs Compliant Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| IDSS | 9200 milliamps |
