Vishay Intertechnology, Inc. Single FETs, MOSFETs IRL520PBF

Description
N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRL520PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL520PBF-ND
Single FETs, MOSFETs IRL520PBF-ND
N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB

N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Single FETs, MOSFETs - IRL520PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRL520PBF
Single FETs, MOSFETs IRL520PBF
MOSFET N-CH 100V 9.2A TO220AB

MOSFET N-CH 100V 9.2A TO220AB

Supplier's Site Datasheet
Transistor - 16357377 - Radwell International
Willingboro, NJ, United States
Transistor
16357377
Transistor 16357377
POWER FIELD-EFFECT TRANSISTOR, 9.2A I(D), 100V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 9.2A I(D), 100V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520PBF - 1047500-IRL520PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520PBF
1047500-IRL520PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520PBF 1047500-IRL520PBF
Manufacturer: Vishay Win Source Part Number: 1047500-IRL520PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 270 mOhm @ 5.5A, 5V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Quantity per package: 50

Manufacturer: Vishay
Win Source Part Number: 1047500-IRL520PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 270 mOhm @ 5.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50

Buy Now Datasheet
Mosfet Transistor, N Channel, 9.2 A, 100 V, 270 Mohm, 5 V, 2 V Rohs Compliant Vishay - 97K2387 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 9.2 A, 100 V, 270 Mohm, 5 V, 2 V Rohs Compliant Vishay
97K2387
Mosfet Transistor, N Channel, 9.2 A, 100 V, 270 Mohm, 5 V, 2 V Rohs Compliant Vishay 97K2387
MOSFET Transistor, N Channel, 9.2 A, 100 V, 270 mohm, 5 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 9.2 A, 100 V, 270 mohm, 5 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 844-IRL520LPBF

MOSFET RECOMMENDED ALT 844-IRL520LPBF

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V - 70078977 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V
70078977
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V 70078977
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL520PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL520PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL520PBF
MOSFET N-CH 100V 9.2A TO220AB

MOSFET N-CH 100V 9.2A TO220AB

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Radwell International Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRL520PBF-ND IRL520PBF 16357377 1047500-IRL520PBF 97K2387 IRL520PBF 70078977 IRL520PBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520PBF Mosfet Transistor, N Channel, 9.2 A, 100 V, 270 Mohm, 5 V, 2 V Rohs Compliant Vishay MOSFET MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3 TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts 100 volts
IDSS 9200 milliamps
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