MOSFET N-CH 100V 5.6A TO220AB
Manufacturer: Vishay
Win Source Part Number: 131403-IRL510PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MOSFET N-Channel 100V 5.6A TO220AB
MOSFET N-Channel 100V 5.6A TO220AB
N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V
MOSFET N-CH 100V 5.6A TO220AB
100V 5.6A 43W 540mΩ@3.4A,5V 2V@250uA null TO-220AB-3 MOSFETs ROHS
MOSFET, N-CH, 100V, 5.6A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | DigiKey | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRL510PBF | 131403-IRL510PBF | 5410610 | IRL510PBF-ND | 70078976 | IRL510PBF | IRL510PBF | 97K2385 | IRL510PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510PBF | MOSFETs | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 100V, 5.6A, To-220Ab; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| IDSS | 5600 milliamps | 5600 milliamps | 5600 milliamps | ||||||
| PD | 43000 milliwatts | 43000 milliwatts | 43000 milliwatts | 43000 milliwatts |
