Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510PBF IRL510PBF

Description
Manufacturer: Vishay Win Source Part Number: 131403-IRL510PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 50
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510PBF - 131403-IRL510PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRL510PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRL510PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL510PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 100V, 5.6A, To-220Ab; Channel Type Vishay - 97K2385 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V - 70078976 - Allied Electronics, Inc.
    Allied Electronics, Inc.
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Description
Manufacturer: Vishay Win Source Part Number: 131403-IRL510PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510PBF - 131403-IRL510PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510PBF
131403-IRL510PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510PBF 131403-IRL510PBF
Manufacturer: Vishay Win Source Part Number: 131403-IRL510PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.1nC @ 5V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: Vishay
Win Source Part Number: 131403-IRL510PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.1nC @ 5V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5410610
MOSFETs 5410610
MOSFET N-Channel 100V 5.6A TO220AB

MOSFET N-Channel 100V 5.6A TO220AB

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780815
MOSFETs 1780815
MOSFET N-Channel 100V 5.6A TO220AB

MOSFET N-Channel 100V 5.6A TO220AB

Supplier's Site
Single FETs, MOSFETs - IRL510PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRL510PBF
Single FETs, MOSFETs IRL510PBF
MOSFET N-CH 100V 5.6A TO220AB

MOSFET N-CH 100V 5.6A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRL510PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL510PBF-ND
Single FETs, MOSFETs IRL510PBF-ND
N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB

N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRL510PBF
MOSFET IRL510PBF
MOSFET N-CH 100V HEXFET MOSFET

MOSFET N-CH 100V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL510PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL510PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL510PBF
MOSFET N-CH 100V 5.6A TO220AB

MOSFET N-CH 100V 5.6A TO220AB

Supplier's Site
Mosfet, N-Ch, 100V, 5.6A, To-220Ab; Channel Type Vishay - 97K2385 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 5.6A, To-220Ab; Channel Type Vishay
97K2385
Mosfet, N-Ch, 100V, 5.6A, To-220Ab; Channel Type Vishay 97K2385
MOSFET, N-CH, 100V, 5.6A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 5.6A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRL510PBF
Triode/MOS Tube/Transistor >> MOSFETs IRL510PBF
100V 5.6A 43W 540mΩ@3.4A,5V 2V@250uA null TO-220AB-3 MOSFETs ROHS

100V 5.6A 43W 540mΩ@3.4A,5V 2V@250uA null TO-220AB-3 MOSFETs ROHS

Supplier's Site Datasheet
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V - 70078976 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V
70078976
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V 70078976
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company LCSC Electronics Technology (HK) Limited Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 131403-IRL510PBF 5410610 IRL510PBF IRL510PBF-ND IRL510PBF IRL510PBF 97K2385 IRL510PBF 70078976
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL510PBF MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 5.6A, To-220Ab; Channel Type Vishay Triode/MOS Tube/Transistor >> MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts 100 volts 100 volts
PD 43000 milliwatts 43000 milliwatts 43000 milliwatts 43000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220 TO-220
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