Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48RS IRFZ48RS

Description
Manufacturer: Vishay Win Source Part Number: 161125-IRFZ48RS Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 43A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 161125-IRFZ48RS Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 43A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48RS - 161125-IRFZ48RS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48RS
161125-IRFZ48RS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48RS 161125-IRFZ48RS
Manufacturer: Vishay Win Source Part Number: 161125-IRFZ48RS Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 43A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 161125-IRFZ48RS
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 43A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 161125-IRFZ48RS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48RS
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 190000 milliwatts
Unlock Full Specs
to access all available technical data