The N Channel MOSFET, part number 26AC0568, features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) rating of 30A, making it suitable for various power applications. It has a low on-resistance (Rds(on)) of 0.050Oc at a gate-source voltage (Vgs) of 10V, which contributes to efficient performance. The device operates within a temperature range of -55¬8C to +175¬8C and has a maximum power dissipation of 88W at a case temperature of 25¬8C. This MOSFET is packaged in a TO-220AB configuration, which is widely used in commercial and industrial applications due to its low thermal resistance and ease of mounting. It also supports fast switching capabilities and has a total gate charge (Qg) of 46nC, facilitating efficient drive requirements. The product is compliant with RoHS directives, ensuring it meets environmental standards. Engineers considering this MOSFET for their projects should evaluate its specifications against their application requirements, particularly in terms of voltage, current, and thermal management.
N CHANNEL MOSFET, 60V, 30A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC0568 |
| Product Name | N Channel Mosfet, 60V, 30A, To-220; Channel Type Vishay |
| Polarity | N-Channel |