Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24SPBF IRFZ24SPBF

Description
Manufacturer: Vishay Win Source Part Number: 017728-IRFZ24SPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24SPBF - 017728-IRFZ24SPBF - Win Source Electronics
    Win Source Electronics
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    DigiKey
  • Single N-Channel 60 V 0.1 Ohm 25 nC 3.7 W Silicon SMT Mosfet - TO-263-3 - 880-IRFZ24SPBF - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ24SPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017728-IRFZ24SPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24SPBF - 017728-IRFZ24SPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24SPBF
017728-IRFZ24SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24SPBF 017728-IRFZ24SPBF
Manufacturer: Vishay Win Source Part Number: 017728-IRFZ24SPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017728-IRFZ24SPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFZ24SPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ24SPBF-ND
Single FETs, MOSFETs IRFZ24SPBF-ND
N-Channel 60V 17A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 60V 17A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single N-Channel 60 V 0.1 Ohm 25 nC 3.7 W Silicon SMT Mosfet - TO-263-3 - 880-IRFZ24SPBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Single N-Channel 60 V 0.1 Ohm 25 nC 3.7 W Silicon SMT Mosfet - TO-263-3
880-IRFZ24SPBF
Single N-Channel 60 V 0.1 Ohm 25 nC 3.7 W Silicon SMT Mosfet - TO-263-3 880-IRFZ24SPBF
Single N-Channel 60 V 0.1 Ohm 25 nC 3.7 W Silicon SMT Mosfet - TO-263-3

Single N-Channel 60 V 0.1 Ohm 25 nC 3.7 W Silicon SMT Mosfet - TO-263-3

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ24SPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ24SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ24SPBF
MOSFET N-CH 60V 17A TO263

MOSFET N-CH 60V 17A TO263

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFZ24SPBF
MOSFET IRFZ24SPBF
MOSFET 60V 100mOhm@10V 17A N-Ch

MOSFET 60V 100mOhm@10V 17A N-Ch

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017728-IRFZ24SPBF IRFZ24SPBF-ND 880-IRFZ24SPBF IRFZ24SPBF IRFZ24SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24SPBF Single FETs, MOSFETs Single N-Channel 60 V 0.1 Ohm 25 nC 3.7 W Silicon SMT Mosfet - TO-263-3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 3700 to 60000 milliwatts 3700 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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