Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRR IRFZ14STRR

Description
Manufacturer: Vishay Win Source Part Number: 1047231-IRFZ14STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRR - 1047231-IRFZ14STRR - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ14STRR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Vishay Win Source Part Number: 1047231-IRFZ14STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRR - 1047231-IRFZ14STRR - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRR
1047231-IRFZ14STRR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRR 1047231-IRFZ14STRR
Manufacturer: Vishay Win Source Part Number: 1047231-IRFZ14STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1047231-IRFZ14STRR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ14STRR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ14STRR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ14STRR
MOSFET N-CH 60V 10A D2PAK

MOSFET N-CH 60V 10A D2PAK

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1047231-IRFZ14STRR IRFZ14STRR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRR Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 3700 to 43000 milliwatts
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