Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFZ14STRLPBF

Description
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK
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Description
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - IRFZ14STRLPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ14STRLPBF-ND
Single FETs, MOSFETs IRFZ14STRLPBF-ND
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK

N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRLPBF - 1047230-IRFZ14STRLPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRLPBF
1047230-IRFZ14STRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRLPBF 1047230-IRFZ14STRLPBF
Manufacturer: Vishay Win Source Part Number: 1047230-IRFZ14STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1047230-IRFZ14STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

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MOSFET N-CH 60V 10A D2PAK - 880-IRFZ14STRLPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 10A D2PAK
880-IRFZ14STRLPBF
MOSFET N-CH 60V 10A D2PAK 880-IRFZ14STRLPBF
MOSFET N-CH 60V 10A D2PAK

MOSFET N-CH 60V 10A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET N-Channel 60V

MOSFET MOSFET N-Channel 60V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ14STRLPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ14STRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ14STRLPBF
MOSFET N-CH 60V 10A D2PAK

MOSFET N-CH 60V 10A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFZ14STRLPBF-ND 1047230-IRFZ14STRLPBF 880-IRFZ14STRLPBF IRFZ14STRLPBF IRFZ14STRLPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ14STRLPBF MOSFET N-CH 60V 10A D2PAK MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 60 volts
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