Vishay Intertechnology, Inc. FETs - Single - IRFZ14S IRFZ14S

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188160-IRFZ14S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.7W, 43W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 200mOhm at 6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 11nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188160-IRFZ14S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.7W, 43W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 200mOhm at 6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 11nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFZ14S - 1188160-IRFZ14S - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFZ14S
1188160-IRFZ14S
FETs - Single - IRFZ14S 1188160-IRFZ14S
Manufacturer: Vishay Siliconix Win Source Part Number: 1188160-IRFZ14S Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.7W, 43W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 200mOhm at 6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 11nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188160-IRFZ14S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.7W, 43W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 200mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 11nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 25V

Buy Now
Single FETs, MOSFETs - IRFZ14S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ14S-ND
Single FETs, MOSFETs IRFZ14S-ND
N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ14S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ14S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ14S
MOSFET N-CH 60V 10A D2PAK

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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1188160-IRFZ14S IRFZ14S-ND IRFZ14S
Product Name FETs - Single - IRFZ14S Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 3700 to 43000 milliwatts
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