N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB
N-Channel MOSFET, 60V, 10A, 200mR, TO-220AB Product overview: IRFZ10PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ10PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1047229-IRFZ10PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 60V 10A TO-220AB
N CHANNEL MOSFET, 60V, 10A; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 60V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 10A TO220AB
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | IRFZ10PBF-ND | 278-IRFZ10PBF | 1047229-IRFZ10PBF | IRFZ10PBF | 880-IRFZ10PBF | 31K2098 | 16342369 | IRFZ10PBF |
| Product Name | Single FETs, MOSFETs | N-Channel 60V 10A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ10PBF | MOSFET | MOSFET N-CH 60V 10A TO-220AB | N Channel Mosfet, 60V, 10A; Channel Type Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-3 | TO-220; TO-220-3 | ||||
| PD | 43000 milliwatts | 43000 milliwatts | 43000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| V(BR)DSS | 60 volts | 60 volts |
