Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF IRFUC20PBF

Description
Manufacturer: Vishay Win Source Part Number: 017725-IRFUC20PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF - 017725-IRFUC20PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFUC20PBF-ND - DigiKey
    DigiKey
  • Transistor - 16342365 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFUC20PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay - 01AC4885 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017725-IRFUC20PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF - 017725-IRFUC20PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF
017725-IRFUC20PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF 017725-IRFUC20PBF
Manufacturer: Vishay Win Source Part Number: 017725-IRFUC20PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017725-IRFUC20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFUC20PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFUC20PBF-ND
Single FETs, MOSFETs IRFUC20PBF-ND
N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Buy Now Datasheet
Transistor - 16342365 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16342365
Transistor 16342365
MOSFET, N-CH, 600V, 2A, TO-251AA; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):4.4OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER DISSIPATION ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 600V, 2A, TO-251AA; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):4.4OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER DISSIPATION ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFUC20PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFUC20PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFUC20PBF
MOSFET N-CH 600V 2A TO251AA

MOSFET N-CH 600V 2A TO251AA

Supplier's Site
Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay - 01AC4885 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay
01AC4885
Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay 01AC4885
MOSFET, N-CH, 600V, 2A, TO-251AA; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 600V, 2A, TO-251AA; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFUC20PBF
MOSFET IRFUC20PBF
MOSFET N-Chan 600V 2.0 Amp

MOSFET N-Chan 600V 2.0 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017725-IRFUC20PBF IRFUC20PBF-ND 16342365 IRFUC20PBF 01AC4885 IRFUC20PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 2500 to 42000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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