Vishay Precision Group Single FETs, MOSFETs IRFUC20PBF

Description
N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Request a Quote Datasheet
Description
N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFUC20PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFUC20PBF-ND
Single FETs, MOSFETs IRFUC20PBF-ND
N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF - 017725-IRFUC20PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF
017725-IRFUC20PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF 017725-IRFUC20PBF
Manufacturer: Vishay Win Source Part Number: 017725-IRFUC20PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017725-IRFUC20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 16342365 - Radwell International
Willingboro, NJ, United States
Transistor
16342365
Transistor 16342365
MOSFET, N-CH, 600V, 2A, TO-251AA; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):4.4OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER DISSIPATION ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 600V, 2A, TO-251AA; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):4.4OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER DISSIPATION ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFUC20PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFUC20PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFUC20PBF
MOSFET N-CH 600V 2A TO251AA

MOSFET N-CH 600V 2A TO251AA

Supplier's Site
Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay - 01AC4885 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay
01AC4885
Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay 01AC4885
MOSFET, N-CH, 600V, 2A, TO-251AA; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 600V, 2A, TO-251AA; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Chan 600V 2.0 Amp

MOSFET N-Chan 600V 2.0 Amp

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFUC20PBF-ND 017725-IRFUC20PBF 16342365 IRFUC20PBF 01AC4885 IRFUC20PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFUC20PBF Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 2A, To-251Aa; Transistor Polarity Vishay MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-3
V(BR)DSS 600 volts
PD 2500 to 42000 milliwatts
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