P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
MOSFET P-CH 100V 5.6A TO251AA
P-CH MOSFET 100V 5.6A TO-251 Product overview: IRFU9120PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU9120PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 205412-IRFU9120PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET P-CH 100V 5.6A TO251AA
MOSFET Transistor, P Channel, 5.6 A, 100 V, 600 mohm, -10 V, -4 V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFU9120PBF-ND | IRFU9120PBF | 278-IRFU9120PBF | 205412-IRFU9120PBF | IRFU9120PBF | 38K2699 | IRFU9120PBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V 5.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9120PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, 5.6 A, 100 V, 600 Mohm, -10 V, -4 V Rohs Compliant Vishay | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | SOT3; TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts |
