Vishay Precision Group Transistor IRFU9024PBF

Description
POWER FIELD-EFFECT TRANSISTOR, 8.8A I(D), 60V, 0.28OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251AA. FREE 2 YEAR RADWELL WARRANTY
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Description
POWER FIELD-EFFECT TRANSISTOR, 8.8A I(D), 60V, 0.28OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251AA. FREE 2 YEAR RADWELL WARRANTY
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Datasheet
Datasheet Summary
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The Vishay P-Channel MOSFET transistor is rated for a continuous drain current of 8.8 A and a maximum drain-source voltage of 60 V. It features a low on-resistance of 280 mOc at a gate-source voltage of -10 V, making it suitable for applications requiring efficient power management. The device is designed for surface mounting in a DPAK (TO-252) package, with a maximum power dissipation of 42 W at a case temperature of 25 ¬8C. It supports fast switching capabilities and is compliant with RoHS standards. The transistor also has a gate-source threshold voltage ranging from -2.0 V to -4.0 V and can handle repetitive avalanche currents up to 8.8 A. Its thermal resistance ratings indicate a maximum junction-to-ambient resistance of 110 ¬8C/W, which is important for thermal management in circuit designs. This MOSFET is suitable for various applications, including power switching and amplification in electronic circuits.

Datasheet Summary
Powered by GS/AI

The Vishay P-Channel MOSFET transistor is rated for a continuous drain current of 8.8 A and a maximum drain-source voltage of 60 V. It features a low on-resistance of 280 mOc at a gate-source voltage of -10 V, making it suitable for applications requiring efficient power management. The device is designed for surface mounting in a DPAK (TO-252) package, with a maximum power dissipation of 42 W at a case temperature of 25 ¬8C. It supports fast switching capabilities and is compliant with RoHS standards. The transistor also has a gate-source threshold voltage ranging from -2.0 V to -4.0 V and can handle repetitive avalanche currents up to 8.8 A. Its thermal resistance ratings indicate a maximum junction-to-ambient resistance of 110 ¬8C/W, which is important for thermal management in circuit designs. This MOSFET is suitable for various applications, including power switching and amplification in electronic circuits.

Suppliers

Company
Product
Description
Supplier Links
Transistor - 16342337 - Radwell International
Willingboro, NJ, United States
Transistor
16342337
Transistor 16342337
POWER FIELD-EFFECT TRANSISTOR, 8.8A I(D), 60V, 0.28OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251AA. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 8.8A I(D), 60V, 0.28OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251AA. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024PBF - 084084-IRFU9024PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024PBF
084084-IRFU9024PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024PBF 084084-IRFU9024PBF
Manufacturer: Vishay Win Source Part Number: 084084-IRFU9024PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 570pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 5.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 084084-IRFU9024PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 570pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 5.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRFU9024PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU9024PBF-ND
Single FETs, MOSFETs IRFU9024PBF-ND
P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Buy Now Datasheet
MOSFETs - 1808827 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808827
MOSFETs 1808827
P channel ;VBRDSS -60 V; RDSon 280 mOh

P channel ;VBRDSS -60 V; RDSon 280 mOh

Supplier's Site
MOSFETs - 1808353 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808353
MOSFETs 1808353
P channel ;VBRDSS -60 V; RDSon 280 mOh

P channel ;VBRDSS -60 V; RDSon 280 mOh

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-Chan 60V 8.8 Amp

MOSFET P-Chan 60V 8.8 Amp

Buy Now Datasheet
Mosfet Transistor, P Channel, 8.8 A, 60 V, 280 Mohm, -10 V, -4 V Rohs Compliant Vishay - 38K2696 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 8.8 A, 60 V, 280 Mohm, -10 V, -4 V Rohs Compliant Vishay
38K2696
Mosfet Transistor, P Channel, 8.8 A, 60 V, 280 Mohm, -10 V, -4 V Rohs Compliant Vishay 38K2696
MOSFET Transistor, P Channel, 8.8 A, 60 V, 280 mohm, -10 V, -4 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 8.8 A, 60 V, 280 mohm, -10 V, -4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU9024PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU9024PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU9024PBF
MOSFET P-CH 60V 8.8A TO251AA

MOSFET P-CH 60V 8.8A TO251AA

Supplier's Site

Technical Specifications

  Radwell International Win Source Electronics DigiKey RS Components, Ltd. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 16342337 084084-IRFU9024PBF IRFU9024PBF-ND 1808827 IRFU9024PBF 38K2696 IRFU9024PBF
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024PBF Single FETs, MOSFETs MOSFETs MOSFET Mosfet Transistor, P Channel, 8.8 A, 60 V, 280 Mohm, -10 V, -4 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 60 volts
PD 2500 to 42000 milliwatts
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