The Vishay P-Channel MOSFET transistor is rated for a continuous drain current of 8.8 A and a maximum drain-source voltage of 60 V. It features a low on-resistance of 280 mOc at a gate-source voltage of -10 V, making it suitable for applications requiring efficient power management. The device is designed for surface mounting in a DPAK (TO-252) package, with a maximum power dissipation of 42 W at a case temperature of 25 ¬8C. It supports fast switching capabilities and is compliant with RoHS standards. The transistor also has a gate-source threshold voltage ranging from -2.0 V to -4.0 V and can handle repetitive avalanche currents up to 8.8 A. Its thermal resistance ratings indicate a maximum junction-to-ambient resistance of 110 ¬8C/W, which is important for thermal management in circuit designs. This MOSFET is suitable for various applications, including power switching and amplification in electronic circuits.
P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Manufacturer: Vishay
Win Source Part Number: 084084-IRFU9024PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 570pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 5.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
POWER FIELD-EFFECT TRANSISTOR, 8.8A I(D), 60V, 0.28OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251AA. FREE 2 YEAR RADWELL WARRANTY
P channel ;VBRDSS -60 V; RDSon 280 mOh
P channel ;VBRDSS -60 V; RDSon 280 mOh
MOSFET Transistor, P Channel, 8.8 A, 60 V, 280 mohm, -10 V, -4 V RoHS Compliant: Yes
MOSFET P-CH 60V 8.8A TO251AA
| DigiKey | Win Source Electronics | Radwell International | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFU9024PBF-ND | 084084-IRFU9024PBF | 16342337 | 1808827 | 38K2696 | IRFU9024PBF | IRFU9024PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9024PBF | Transistor | MOSFETs | Mosfet Transistor, P Channel, 8.8 A, 60 V, 280 Mohm, -10 V, -4 V Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; TO-251AA | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | |||
| V(BR)DSS | 60 volts |
