Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFU430APBF

Description
N-Channel 500V 5A (Tc) 110W (Tc) Through Hole TO-251AA
  • Single FETs, MOSFETs - IRFU430APBF-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IRFU430APBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF - 069614-IRFU430APBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU430APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 - 70078970 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
N-Channel 500V 5A (Tc) 110W (Tc) Through Hole TO-251AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFU430APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU430APBF-ND
Single FETs, MOSFETs IRFU430APBF-ND
N-Channel 500V 5A (Tc) 110W (Tc) Through Hole TO-251AA

N-Channel 500V 5A (Tc) 110W (Tc) Through Hole TO-251AA

Buy Now Datasheet
Single FETs, MOSFETs - IRFU430APBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFU430APBF
Single FETs, MOSFETs IRFU430APBF
MOSFET N-CH 500V 5A TO251AA

MOSFET N-CH 500V 5A TO251AA

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF - 069614-IRFU430APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF
069614-IRFU430APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF 069614-IRFU430APBF
Manufacturer: Vishay Win Source Part Number: 069614-IRFU430APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 069614-IRFU430APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU430APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU430APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU430APBF
MOSFET N-CH 500V 5A TO251AA

MOSFET N-CH 500V 5A TO251AA

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFU430APBF
MOSFET IRFU430APBF
MOSFET N-Chan 500V 5.0 Amp

MOSFET N-Chan 500V 5.0 Amp

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 - 70078970 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55
70078970
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 70078970
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55

MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Allied Electronics, Inc.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFU430APBF-ND IRFU430APBF 069614-IRFU430APBF IRFU430APBF IRFU430APBF 70078970
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA SOT3; TO-251AA TO-251-3 Short Leads, IPak, TO-251AA I-Pak
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts 500 volts
IDSS 5000 milliamps
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