Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF IRFU430APBF

Description
Manufacturer: Vishay Win Source Part Number: 069614-IRFU430APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF - 069614-IRFU430APBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFU430APBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFU430APBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU430APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 - 70078970 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 069614-IRFU430APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF - 069614-IRFU430APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF
069614-IRFU430APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF 069614-IRFU430APBF
Manufacturer: Vishay Win Source Part Number: 069614-IRFU430APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 069614-IRFU430APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 500V 5A MOSFET Transistor
2088-IRFU430APBF
N-Channel 500V 5A MOSFET Transistor 2088-IRFU430APBF
N-Channel MOSFET, 500V, 5A, 1.7R, TO-251 Product overview: IRFU430APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFU430APBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 500V, 5A, 1.7R, TO-251 Product overview: IRFU430APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFU430APBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFU430APBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFU430APBF
Single FETs, MOSFETs IRFU430APBF
MOSFET N-CH 500V 5A TO251AA

MOSFET N-CH 500V 5A TO251AA

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFU430APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU430APBF-ND
Single FETs, MOSFETs IRFU430APBF-ND
N-Channel 500V 5A (Tc) 110W (Tc) Through Hole TO-251AA

N-Channel 500V 5A (Tc) 110W (Tc) Through Hole TO-251AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU430APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU430APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU430APBF
MOSFET N-CH 500V 5A TO251AA

MOSFET N-CH 500V 5A TO251AA

Supplier's Site
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 - 70078970 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55
70078970
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 70078970
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55

MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFU430APBF
MOSFET IRFU430APBF
MOSFET N-Chan 500V 5.0 Amp

MOSFET N-Chan 500V 5.0 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069614-IRFU430APBF 2088-IRFU430APBF IRFU430APBF IRFU430APBF-ND IRFU430APBF 70078970 IRFU430APBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF N-Channel 500V 5A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts 500 volts 500 volts
PD 110000 milliwatts 110000 milliwatts 110000 milliwatts 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA I-Pak
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