Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFU430APBF

Description
MOSFET N-CH 500V 5A TO251AA
  • Single FETs, MOSFETs - IRFU430APBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFU430APBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF - 069614-IRFU430APBF - Win Source Electronics
    Win Source Electronics
  • MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 - 70078970 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU430APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 500V 5A TO251AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFU430APBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFU430APBF
Single FETs, MOSFETs IRFU430APBF
MOSFET N-CH 500V 5A TO251AA

MOSFET N-CH 500V 5A TO251AA

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFU430APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU430APBF-ND
Single FETs, MOSFETs IRFU430APBF-ND
N-Channel 500V 5A (Tc) 110W (Tc) Through Hole TO-251AA

N-Channel 500V 5A (Tc) 110W (Tc) Through Hole TO-251AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF - 069614-IRFU430APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF
069614-IRFU430APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF 069614-IRFU430APBF
Manufacturer: Vishay Win Source Part Number: 069614-IRFU430APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 069614-IRFU430APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 - 70078970 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55
70078970
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 70078970
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55

MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU430APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU430APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU430APBF
MOSFET N-CH 500V 5A TO251AA

MOSFET N-CH 500V 5A TO251AA

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFU430APBF
MOSFET IRFU430APBF
MOSFET N-Chan 500V 5.0 Amp

MOSFET N-Chan 500V 5.0 Amp

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFU430APBF IRFU430APBF-ND 069614-IRFU430APBF 70078970 IRFU430APBF IRFU430APBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU430APBF MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts 500 volts
IDSS 5000 milliamps
PD 110000 milliwatts 110000 milliwatts 110000 milliwatts
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