Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU320PBF IRFU320PBF

Description
Manufacturer: Vishay Win Source Part Number: 017722-IRFU320PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 017722-IRFU320PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU320PBF - 017722-IRFU320PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU320PBF
017722-IRFU320PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU320PBF 017722-IRFU320PBF
Manufacturer: Vishay Win Source Part Number: 017722-IRFU320PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017722-IRFU320PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFU320PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU320PBF-ND
Single FETs, MOSFETs IRFU320PBF-ND
N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU320PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU320PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU320PBF
MOSFET N-CH 400V 3.1A TO251AA

MOSFET N-CH 400V 3.1A TO251AA

Supplier's Site
N Channel Mosfet, 400V, 3.1A, Ipak; Channel Type Vishay - 63J7066 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 400V, 3.1A, Ipak; Channel Type Vishay
63J7066
N Channel Mosfet, 400V, 3.1A, Ipak; Channel Type Vishay 63J7066
N CHANNEL MOSFET, 400V, 3.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 400V, 3.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 400V 3.1 Amp

MOSFET N-Chan 400V 3.1 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017722-IRFU320PBF IRFU320PBF-ND IRFU320PBF 63J7066 IRFU320PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU320PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 400V, 3.1A, Ipak; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 400 volts
PD 2500 to 42000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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