N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
N-Channel Power MOSFET, 200V, 4.8A, 800mR, TO-251 Product overview: IRFU220PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 4.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 4.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU220PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 069606-IRFU220PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET TRANSISTOR, N CHANNEL, 4.8 A, 200 V, 800 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 200V HEXFET MOSFET I-PAK
200V 4.8A 800mΩ@2.9A,10V 4V@250uA null TO-251 MOSFETs ROHS
MOSFET Transistor, N Channel, 4.8 A, 200 V, 800 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 200V 4.8A TO251AA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFU220PBF-ND | 278-IRFU220PBF | 069606-IRFU220PBF | 16342293 | IRFU220PBF | IRFU220PBF | 17930-IRFU220PBF | 38K2665 | IRFU220PBF |
| Product Name | Single FETs, MOSFETs | N-Channel 200V 4.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU220PBF | Transistor | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | TO-251-3 MOSFETs ROHS | Mosfet Transistor, N Channel, 4.8 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; TO-251AA | TO-252 (DPAK) | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | ||||
| PD | 2500 milliwatts | 2500 to 42000 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
