N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA
MOSFET N-CH 200V 2.6A TO251AA
N-Channel MOSFET, 200V, 2.6A, 1.5R, TO-251 Product overview: IRFU210PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU210PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1040377-IRFU210PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Family Name: IRFU210
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.6A, 10V
Alternative Parts (Cross-Reference): SiHFU210-GE3; SiHFU210; SiHFU210-E3; IRFU210BTLTU-FP001;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 200V, 2.6A, IPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):1.5ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
MOSFET, N-CH, 200V, 2.6A, TO-251 ROHS COMPLIANT: YES
MOSFET N-CH 200V 2.6A TO251AA
MOSFET N-CH 200V HEXFET MOSFET I-PAK
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFU210PBF-ND | IRFU210PBF | 278-IRFU210PBF | 1040377-IRFU210PBF | 63J7056 | 56AJ9906 | IRFU210PBF | IRFU210PBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 200V 2.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU210PBF | N Channel Mosfet, 200V, 2.6A, Ipak; Transistor Polarity Vishay | Mosfet, N-Ch, 200V, 2.6A, To-251 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | SOT3; TO-251AA | TO-3 | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 200 volts | 200 volts | ||||||
| IDSS | 2600 milliamps | 2600 milliamps |
