Manufacturer: Vishay
Win Source Part Number: 1040376-IRFU1N60APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 229pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 7 Ohm @ 840mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
600V 1.4A N-Channel MOSFET TO-251 7 Ohm Product overview: IRFU1N60APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 1.4A, 7 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.4A, 7 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU1N60APBF can be used for catalog matching and distributor lookup.
N-Channel 600V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA
Trans MOSFET N-CH 600V 1.4A 3-Pin(3+Tab)
Trans MOSFET N-CH 600V 1.4A 3-Pin(3+Tab)
MOSFET N-CH 600V 1.4A TO251AA
MOSFET N-CH 600V HEXFET MOSFET I-PAK
MOSFET N-CH 600V 1.4A TO251AA
MOSFET, N-CH, 600V, 1.4A, TO-251 ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1040376-IRFU1N60APBF | 278-IRFU1N60APBF | 742-IRFU1N60APBF-ND | 8120660 | IRFU1N60APBF | IRFU1N60APBF | IRFU1N60APBF | 56AJ9905 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU1N60APBF | N-Channel 600V 1.4A 7 Ohm MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 1.4A, To-251 Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; TO-251AA | TO-251-3 Short Leads, IPAK, TO-251AA | Ipak (to-251) | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | TO-3 |
