N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Manufacturer: Vishay
Win Source Part Number: 001973-IRFU120PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 4.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
N channel ;VBRDSS 100 V; RDSon 270 mOh
N channel ;VBRDSS 100 V; RDSon 270 mOh
N-Channel MOSFET, 100V, 7.7A, 270mR, TO-251AA Product overview: IRFU120PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 7.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU120PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V HEXFET MOSFET I-PAK
MOSFET, N, 100V, 7.7A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 100V 7.7A TO251AA
| DigiKey | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFU120PBF-ND | 001973-IRFU120PBF | 1808351 | 278-IRFU120PBF | IRFU120PBF | 78Y9477 | IRFU120PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU120PBF | MOSFETs | N-Channel 100V 7.7A MOSFET Transistor | MOSFET | Mosfet, N, 100V, 7.7A, I-Pak; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; TO-251AA | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | |||
| V(BR)DSS | 100 volts | ||||||
| PD | 2500 to 42000 milliwatts | 2500 milliwatts |
