Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFU110

Description
N-Channel 100V 4.3A (Tc) 25W (Tc) Through Hole TO-251AA
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Description
N-Channel 100V 4.3A (Tc) 25W (Tc) Through Hole TO-251AA
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Datasheet
Datasheet Summary
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The IRFU110 is an N-channel MOSFET in an IPAK (TO-251) package designed for fast switching and rugged applications. It has a drain-source voltage rating of 100 V, a continuous drain current of 4.3 A at 25 °C, and a maximum power dissipation of 25 W. The device features a maximum on-resistance of 0.54 Ω at 10 V gate-source voltage, and is rated for repetitive avalanche current up to 4.3 A and avalanche energy up to 2.5 mJ. It has a junction-to-case thermal resistance of 5.0 °C/W and operates from -55 °C to 150 °C. The MOSFET meets RoHS standards and is lead-free and halogen-free.

Datasheet Summary
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The IRFU110 is an N-channel MOSFET in an IPAK (TO-251) package designed for fast switching and rugged applications. It has a drain-source voltage rating of 100 V, a continuous drain current of 4.3 A at 25 °C, and a maximum power dissipation of 25 W. The device features a maximum on-resistance of 0.54 Ω at 10 V gate-source voltage, and is rated for repetitive avalanche current up to 4.3 A and avalanche energy up to 2.5 mJ. It has a junction-to-case thermal resistance of 5.0 °C/W and operates from -55 °C to 150 °C. The MOSFET meets RoHS standards and is lead-free and halogen-free.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFU110-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU110-ND
Single FETs, MOSFETs IRFU110-ND
N-Channel 100V 4.3A (Tc) 25W (Tc) Through Hole TO-251AA

N-Channel 100V 4.3A (Tc) 25W (Tc) Through Hole TO-251AA

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number IRFU110-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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