Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU020 IRFU020

Description
Manufacturer: Vishay Win Source Part Number: 1040373-IRFU020 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1040373-IRFU020 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU020 - 1040373-IRFU020 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU020
1040373-IRFU020
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU020 1040373-IRFU020
Manufacturer: Vishay Win Source Part Number: 1040373-IRFU020 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251AA Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1040373-IRFU020
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFU020-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU020-ND
Single FETs, MOSFETs IRFU020-ND
N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU020 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU020
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU020
MOSFET N-CH 60V 14A TO251AA

MOSFET N-CH 60V 14A TO251AA

Supplier's Site
MOSFET N-CH 60V 14A I-PAK - 880-IRFU020 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 14A I-PAK
880-IRFU020
MOSFET N-CH 60V 14A I-PAK 880-IRFU020
MOSFET N-CH 60V 14A I-PAK

MOSFET N-CH 60V 14A I-PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1040373-IRFU020 IRFU020-ND IRFU020 880-IRFU020
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU020 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 60V 14A I-PAK
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 2500 to 42000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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