Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF IRFSL9N60APBF

Description
Manufacturer: Vishay Win Source Part Number: 017719-IRFSL9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A; Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF - 017719-IRFSL9N60APBF - Win Source Electronics
    Win Source Electronics
  • Transistor - 16342245 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRFSL9N60APBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFSL9N60APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay - 63J7029 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET N-CH 600V 9.2A TO-262 - 880-IRFSL9N60APBF - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017719-IRFSL9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A; Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF - 017719-IRFSL9N60APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF
017719-IRFSL9N60APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF 017719-IRFSL9N60APBF
Manufacturer: Vishay Win Source Part Number: 017719-IRFSL9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A; Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017719-IRFSL9N60APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 16342245 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16342245
Transistor 16342245
POWER FIELD-EFFECT TRANSISTOR, 9.2A, 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 9.2A, 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRFSL9N60APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFSL9N60APBF-ND
Single FETs, MOSFETs IRFSL9N60APBF-ND
N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole I2PAK

N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole I2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFSL9N60APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFSL9N60APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFSL9N60APBF
MOSFET N-CH 600V 9.2A I2PAK

MOSFET N-CH 600V 9.2A I2PAK

Supplier's Site
N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay - 63J7029 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay
63J7029
N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay 63J7029
N CHANNEL MOSFET, 600V, 9.2A I2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 9.2A I2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET N-CH 600V 9.2A TO-262 - 880-IRFSL9N60APBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 9.2A TO-262
880-IRFSL9N60APBF
MOSFET N-CH 600V 9.2A TO-262 880-IRFSL9N60APBF
MOSFET N-CH 600V 9.2A TO-262

MOSFET N-CH 600V 9.2A TO-262

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFSL9N60APBF
MOSFET IRFSL9N60APBF
MOSFET N-Chan 600V 9.2 Amp

MOSFET N-Chan 600V 9.2 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Radwell International DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017719-IRFSL9N60APBF 16342245 IRFSL9N60APBF-ND IRFSL9N60APBF 63J7029 880-IRFSL9N60APBF IRFSL9N60APBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay MOSFET N-CH 600V 9.2A TO-262 MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 170000 milliwatts 170000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA TO-3
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