Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF IRFSL9N60APBF

Description
Manufacturer: Vishay Win Source Part Number: 017719-IRFSL9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A; Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF - 017719-IRFSL9N60APBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFSL9N60APBF-ND - DigiKey
    DigiKey
  • Transistor - 16342245 - Radwell International
    Radwell International
  • MOSFET N-CH 600V 9.2A TO-262 - 880-IRFSL9N60APBF - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFSL9N60APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay - 63J7029 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017719-IRFSL9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A; Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF - 017719-IRFSL9N60APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF
017719-IRFSL9N60APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF 017719-IRFSL9N60APBF
Manufacturer: Vishay Win Source Part Number: 017719-IRFSL9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A; Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017719-IRFSL9N60APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFSL9N60APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFSL9N60APBF-ND
Single FETs, MOSFETs IRFSL9N60APBF-ND
N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole I2PAK

N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole I2PAK

Buy Now Datasheet
Transistor - 16342245 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16342245
Transistor 16342245
POWER FIELD-EFFECT TRANSISTOR, 9.2A, 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 9.2A, 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFSL9N60APBF
MOSFET IRFSL9N60APBF
MOSFET N-Chan 600V 9.2 Amp

MOSFET N-Chan 600V 9.2 Amp

Buy Now Datasheet
MOSFET N-CH 600V 9.2A TO-262 - 880-IRFSL9N60APBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 9.2A TO-262
880-IRFSL9N60APBF
MOSFET N-CH 600V 9.2A TO-262 880-IRFSL9N60APBF
MOSFET N-CH 600V 9.2A TO-262

MOSFET N-CH 600V 9.2A TO-262

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFSL9N60APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFSL9N60APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFSL9N60APBF
MOSFET N-CH 600V 9.2A I2PAK

MOSFET N-CH 600V 9.2A I2PAK

Supplier's Site
N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay - 63J7029 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay
63J7029
N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay 63J7029
N CHANNEL MOSFET, 600V, 9.2A I2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 9.2A I2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017719-IRFSL9N60APBF IRFSL9N60APBF-ND 16342245 IRFSL9N60APBF 880-IRFSL9N60APBF IRFSL9N60APBF 63J7029
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF Single FETs, MOSFETs Transistor MOSFET MOSFET N-CH 600V 9.2A TO-262 Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 170000 milliwatts 170000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA TO-3
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