N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole I2PAK
Manufacturer: Vishay
Win Source Part Number: 017719-IRFSL9N60APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): AOW12N65; STFI13NK60Z; IRFSL9N60APBF; IRFSL9N60A;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
600V 9.2A N-Channel MOSFET TO-262-3 750mR Rds(on) Product overview: IRFSL9N60APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFSL9N60APBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 9.2A I2PAK
POWER FIELD-EFFECT TRANSISTOR, 9.2A, 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 600V 9.2A TO-262
N CHANNEL MOSFET, 600V, 9.2A I2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFSL9N60APBF-ND | 017719-IRFSL9N60APBF | 278-IRFSL9N60APBF | IRFSL9N60APBF | 16342245 | IRFSL9N60APBF | 880-IRFSL9N60APBF | 63J7029 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL9N60APBF | N-Channel 600V 9.2A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET | MOSFET N-CH 600V 9.2A TO-262 | N Channel Mosfet, 600V, 9.2A I2-Pak; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; I2PAK | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-3 | ||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 170000 milliwatts | 170000 milliwatts | 170000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
