MOSFET N-CH 500V 11A TO262-3
Manufacturer: Vishay
Win Source Part Number: 1047177-IRFSL11N50AP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1426pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
N-Channel 500V 11A (Tc) 190W (Tc) Through Hole TO-262-3
MOSFET N-CH 500V 11A TO-262
MOSFET N-CH 500V 11A TO262-3
MOSFET N-CH 500V HEXFET MOSFET TO-26
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFSL11N50APBF | 1047177-IRFSL11N50APBF | IRFSL11N50APBF-ND | 880-IRFSL11N50APBF | IRFSL11N50APBF | IRFSL11N50APBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL11N50APBF | Single FETs, MOSFETs | MOSFET N-CH 500V 11A TO-262 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 500 volts | 500 volts | 500 volts | |||
| IDSS | 11000 milliamps | |||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts |
