N-Channel 500V 11A (Tc) 190W (Tc) Through Hole TO-262-3
500V 11A N-Channel MOSFET, 550mR Rds On, TO-262 Product overview: IRFSL11N50APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFSL11N50APBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 500V 11A TO262-3
Manufacturer: Vishay
Win Source Part Number: 1047177-IRFSL11N50AP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1426pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
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| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFSL11N50APBF-ND | 2088-IRFSL11N50APBF | IRFSL11N50APBF | 1047177-IRFSL11N50APBF | IRFSL11N50APBF | 880-IRFSL11N50APBF | IRFSL11N50APBF |
| Product Name | Single FETs, MOSFETs | N-Channel 500V 11A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL11N50APBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 500V 11A TO-262 | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | SOT3; TO-262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA | |||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
