Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL11N50APBF IRFSL11N50APBF

Description
Manufacturer: Vishay Win Source Part Number: 1047177-IRFSL11N50AP BF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1426pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1047177-IRFSL11N50AP BF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1426pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL11N50APBF - 1047177-IRFSL11N50APBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL11N50APBF
1047177-IRFSL11N50APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL11N50APBF 1047177-IRFSL11N50APBF
Manufacturer: Vishay Win Source Part Number: 1047177-IRFSL11N50AP BF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1426pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1047177-IRFSL11N50APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1426pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFSL11N50APBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFSL11N50APBF-ND
Single FETs, MOSFETs IRFSL11N50APBF-ND
N-Channel 500V 11A (Tc) 190W (Tc) Through Hole TO-262-3

N-Channel 500V 11A (Tc) 190W (Tc) Through Hole TO-262-3

Buy Now Datasheet
Single FETs, MOSFETs - IRFSL11N50APBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFSL11N50APBF
Single FETs, MOSFETs IRFSL11N50APBF
MOSFET N-CH 500V 11A TO262-3

MOSFET N-CH 500V 11A TO262-3

Supplier's Site Datasheet
MOSFET N-CH 500V 11A TO-262 - 880-IRFSL11N50APBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 11A TO-262
880-IRFSL11N50APBF
MOSFET N-CH 500V 11A TO-262 880-IRFSL11N50APBF
MOSFET N-CH 500V 11A TO-262

MOSFET N-CH 500V 11A TO-262

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 500V HEXFET MOSFET TO-26

MOSFET N-CH 500V HEXFET MOSFET TO-26

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFSL11N50APBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFSL11N50APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFSL11N50APBF
MOSFET N-CH 500V 11A TO262-3

MOSFET N-CH 500V 11A TO262-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1047177-IRFSL11N50APBF IRFSL11N50APBF-ND IRFSL11N50APBF 880-IRFSL11N50APBF IRFSL11N50APBF IRFSL11N50APBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL11N50APBF Single FETs, MOSFETs Single FETs, MOSFETs MOSFET N-CH 500V 11A TO-262 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 500 volts 500 volts 500 volts
PD 190000 milliwatts 190000 milliwatts 190000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-262-3 TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
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