600V N-Channel MOSFET, 9.2A, 750mR, D2PAK, Surface Mount Product overview: IRFS9N60ATRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 600V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS9N60ATRLPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 105902-IRFS9N60ATRLP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 600V 9.2A D2PAK
MOSFET, N CHANNEL, 600V, 9.2A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 600V, 9.2A, D2PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:170W RoHS Compliant: Yes
MOSFET N-CH 600V 9.2A D2PAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFS9N60ATRLPBF | 105902-IRFS9N60ATRLPBF | IRFS9N60ATRLPBFDKR-ND | IRFS9N60ATRLPBF | 05W6866 | 31K2074 | IRFS9N60ATRLPBF |
| Product Name | N-Channel SMD 600V 9.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS9N60ATRLPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 600V, 9.2A, To-263-3; Channel Type Vishay | N Channel Mosfet, 600V, 9.2A, D2Pak, Full Reel; Channel Type Vishay | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |
| PD | 170000 milliwatts | 170000 milliwatts | 170000 milliwatts | 170000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 600 volts | 600 volts |
